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  this is information on a product in full production. november 2012 doc id 15420 rev 5 1/21 21 STF13NM60N, sti13nm60n, stp13nm60n, stu13nm60n, stw13nm60n n-channel 600 v, 0.28 typ., 11 a mdmesh? ii power mosfet in to-220fp, i2pak, to-220, ipak, to-247 packages datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance applications switching applications description these devices are n-channel power mosfets developed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram order codes v dss (@tjmax) r ds(on) max i d STF13NM60N sti13nm60n stp13nm60n stu13nm60n stw13nm60n 650 v < 0.36 11 a to-220 to-220fp 1 2 3 tab 1 2 3 1 2 3 to-247 1 2 3 i2pak 3 2 1 ipak tab ta b 3# $or4!" ' 3 table 1. device summary order codes marking packages packaging STF13NM60N sti13nm60n stp13nm60n stu13nm60n stw13nm60n 13nm60n to-220fp i2pak to-220 ipak to-247 tu b e tu b e tu b e tu b e tu b e www.st.com
contents stf/i/p/u/w13nm60n 2/21 doc id 15420 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
stf/i/p/u/w13nm60n electrical ratings doc id 15420 rev 5 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp i2pak, to-220, ipak, to-247 v ds drain-source voltage 600 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 (1) 1. limited by maximum junction temperature 11 a i d drain current (continuous) at t c = 100 c 6.93 (1) 6.93 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 44 (1) 44 a p tot total dissipation at t c = 25 c 25 90 w dv/dt (3) 3. i sd 11 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss. peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220fp i2pak to-220 ipak to-247 r thj-case thermal resistance junction-case max 5 1.39 c/w r thj-amb thermal resistance junction-ambient max 62.5 62.5 100 50 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 3.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 200 mj
electrical characteristics stf/i/p/u/w13nm60n 4/21 doc id 15420 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 0.1 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a 0.28 0.36 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 790 60 3.6 - pf pf pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v ds equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 135 - pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 11 a, v gs = 10 v, (see figure 20) - 27 4 14 - nc nc nc r g gate input resistance f=1 mhz open drain - 4.7 -
stf/i/p/u/w13nm60n electrical characteristics doc id 15420 rev 5 5/21 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 300 v, i d = 5.5 a r g =4.7 v gs = 10 v (see figure 19) - 3 8 30 10 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v (see figure 21) - 230 2 18 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 11 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 21) - 290 190 17 ns c a
electrical characteristics stf/i/p/u/w13nm60n 6/21 doc id 15420 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area for i2pak and to-220 figure 3. thermal impedance for i2pak and to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 25 8 v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 3 259v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 9 83 v1
stf/i/p/u/w13nm60n electrical characteristics doc id 15420 rev 5 7/21 figure 8. safe operating area for ipak figure 9. thermal impedance for ipak figure 10. output characteristics figure 11. transfer characteristics figure 12. normalized v ds vs temperature figure 13. static drain-source on-resistance ) $       6 $3 6  ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v ) $       6 $3 6  !     6 '3 6        6 6 6 !-v ) $    6 '3 6  !               6 $3 6 !-v v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 r d s (on) 0.26 0.24 0.22 0.2 0 4 i d (a) ( ) 2 6 0.2 8 0. 3 0 v g s =10v 8 10 am0 33 02v1
electrical characteristics stf/i/p/u/w13nm60n 8/21 doc id 15420 rev 5 figure 14. gate charge vs gate-source voltage figure 15. capacitance variations figure 16. normalized gate threshold voltage vs temperature figure 17. normalized on-resistance vs temperature figure 18. source-drain diode forward characteristics v g s 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =4 8 0v i d =11a 3 0 12 3 00 200 100 0 400 500 v d s v d s (v) am0 33 05v1 #       6 $3 6 p&   #iss #oss #rss !-v v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am0 33 06v1 r d s (on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 1.7 1.5 1. 3 1.9 2.1 i d =5.5a am0 33 07v1 v s d 0 4 i s d (a) (v) 2 10 6 8 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =25c t j =150c am09290v1
stf/i/p/u/w13nm60n test circuits doc id 15420 rev 5 9/21 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf/i/p/u/w13nm60n 10/21 doc id 15420 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
stf/i/p/u/w13nm60n package mechanical data doc id 15420 rev 5 11/21 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
package mechanical data stf/i/p/u/w13nm60n 12/21 doc id 15420 rev 5 figure 25. to-220fp drawing 7012510_rev_k_b
stf/i/p/u/w13nm60n package mechanical data doc id 15420 rev 5 13/21 figure 26. i2pak (to-262) drawing table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40 00049 8 2_rev_h
package mechanical data stf/i/p/u/w13nm60n 14/21 doc id 15420 rev 5 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stf/i/p/u/w13nm60n package mechanical data doc id 15420 rev 5 15/21 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stf/i/p/u/w13nm60n 16/21 doc id 15420 rev 5 table 12. ipak (to-251) mechanical data dim. mm. min. typ max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.3 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10 o
stf/i/p/u/w13nm60n package mechanical data doc id 15420 rev 5 17/21 figure 28. ipak (to-251) drawing 006 8 771_j
package mechanical data stf/i/p/u/w13nm60n 18/21 doc id 15420 rev 5 table 13. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stf/i/p/u/w13nm60n package mechanical data doc id 15420 rev 5 19/21 figure 29. to-247 drawing 0075 3 25_g
revision history stf/i/p/u/w13nm60n 20/21 doc id 15420 rev 5 5 revision history table 14. document revision history date revision changes 29-feb-2009 1 first release 13-jan-2010 2 ? added new package, mechanical data: to-247 ? added new package, mechanical data: d2pak 08-nov-2010 3 ? modified figure 4 ? added new package, mechanical data: i2pak 18-jan-2012 4 ? added new package, mechanical data: ipak ? minor text changes 14-nov-2012 5 the part numbers stb13nm60n and std13nm60n have been moved to a separate datasheet. section 4: package mechanical data has been updated.
stf/i/p/u/w13nm60n doc id 15420 rev 5 21/21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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